We use cookies to ensure the functionality of our website, to personalize content and advertising, to provide social media features, and to analyze our traffic. If you allow us to do so, we also inform our social media, advertising and analysis partners about your use of our website. You can decide for yourself which categories you want to deny or allow. Please note that based on your settings not all functionalities of the site are available.
Further information can be found in our privacy policy.
Recent Comments
Hi everyone,
I'm thrilled to share that our latest article, titled "Interface Analysis of Oxide-Free MoS₂ Films Fabricated by Solution Process," has been published in Scientific Reports!
In this study:
We successfully fabricated high-quality, oxide-free MoS₂ films using a sulfurization-free, solution-based method, optimized for precise control over film uniformity and thickness.
Our findings demonstrate enhanced properties, making these films ideal for integration into advanced electronic devices, where minimizing oxidation is crucial for stability and performance.
This research paves the way for the application of MoS₂ in next-generation electronics and supports our ongoing efforts to advance 2D material synthesis for semiconductor applications. Interested readers can access the full article here:
https://www.nature.com/articles/s41598-024-78229-1.