A hybrid technology platform combining tunnel FETs and MOSFETs
Read the paper
A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon - Nature Electronics
InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal–oxide–semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power logic systems.
Subscribe to the Topic
This journal publishes both fundamental and applied research across all areas of electronics, from the study of novel phenomena and devices, to the design, construction and wider application of electronic circuits.