The book “Graphene for Post-Moore Silicon Optoelectronics”, explores emerging applications of 2D-3D hybrid systems and showcases their importance in post-Moore optoelectronics. It explores the potential of silicon and its well-matured technology in achieving intriguing benefits of graphene and other related 2D materials for future optoelectronics.
Moore's law projects a doubling of digital electronic devices every two years within a fixed cost and area while improving their performance and functionality. But this progress has slowed due to difficulty in achieving complex doping profiles and excessive leakage currents when devices are scaled down below 3 nm. To overcome this, new technologies based on novel materials, circuits, and device architecture has been explored. 2D materials like graphene have emerged as alternate candidates for both computational and non-computational applications due to their atomically thin structures and excellent charge transport properties.
In recent years, prototypes of 2D/Si chips, specifically those utilizing graphene, have been successfully developed for various applications such as image sensor arrays and optical receivers. These prototypes are created on integrated silicon chips, with silicon devices serving as the driver, source, and readout circuitry. This book delves into these prospects and discusses the fundamentals, practical uses, obstacles, and potentials of integrating graphene with Si technologies, with a specific focus on optoelectronic devices in the post-Moore era.
This book, authored by Profs. Yang Xu and Bin Yu and their research team, delve into the challenges and benefits of combining graphene with silicon optoelectronics while discussing the latest advancements in the field. The book emphasizes the significance of studying both 2D and Si as light-absorbing materials and creating a hybrid system that utilizes the strengths of these materials from different dimensions. The book also discusses the importance of the van der Waals (vdWs) approach with enhanced integration freedom in developing next-generation optoelectronics. This book covers important topics in modern optoelectronics, including hot electron emission mechanisms, photogate effects, and optoelectronic synapses, often overlooked in traditional textbook content. The challenges and perspective section in each chapter raises important questions and existing challenges that must be focussed on the future research.
This book places special emphasis on emerging applications such as broadband photodetectors, optoelectronic synaptic devices, optical modulators, and infrared image sensors. It will serve as an excellent reference for graduate students, postdocs, and scientists from both academia and industry.