Shadow‑Assisted Sidewall Emission for Achieving Submicron Linewidth Light Source by Using Normal UV Photolithography

Published in Chemistry and Materials

Shadow‑Assisted Sidewall Emission for Achieving Submicron Linewidth Light Source by Using Normal UV Photolithography
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Shadow-Assisted Sidewall Emission for Achieving Submicron Linewidth Light Source by Using Normal UV Photolithography - Nano-Micro Letters

Micro light sources are crucial tools for studying the interactions between light and matter at the micro/nanoscale, encompassing diverse applications across multiple disciplines. Despite numerous studies on reducing the size of micro light sources and enhancing optical resolution, the efficient and simple fabrication of ultra-high-resolution micro light sources remains challenging due to its reliance on precise micro-nano processing technology and advanced processing equipment. In this study, a simple approach for the efficient fabrication of submicron light sources is proposed, namely shadow-assisted sidewall emission (SASE) technology. The SASE utilizes the widely adopted UV photolithography process, employing metal shadow modulation to precisely control the emission of light from polymer sidewalls, thereby obtaining photoluminescent light sources with submicron line widths. The SASE eliminates the need for complex and cumbersome manufacturing procedures. The effects of process parameters, including exposure dose, development time, and metal film thickness, on the linewidth of sources are investigated on detail. It is successfully demonstrated red, green, and blue submicron light sources. Finally, their potential application in the field of optical anti-counterfeiting is also demonstrated. We believe that the SASE proposed in this work provides a novel approach for the preparation and application of micro light sources.

The development of submicron light sources has long been a challenging yet crucial pursuit in various scientific and technological fields, from bioimaging to optogenetics and beyond. However, the fabrication of such high-resolution light sources often relies on complex and advanced micro-nano processing techniques, limiting their large-scale application. Now, researchers from the College of Physics and Information Engineering at Fuzhou University and the Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, led by Professor Chaoxing Wu, have proposed a novel and efficient method known as Shadow-Assisted Sidewall Emission (SASE) to achieve submicron linewidth light sources using only conventional UV photolithography. Their groundbreaking findings are published in Nano-Micro Letters.

Why SASE Matters

  • High-Resolution Light Sources with Arbitrary Patterns: The SASE technique enables the fabrication of submicron light sources with arbitrary patterns using normal UV photolithography, overcoming the limitations of traditional methods that require complex equipment and processes.
  • Strong Scalability and Versatility: The submicron light sources created via SASE exhibit strong scalability and have been successfully demonstrated in various applications, including optical anti-counterfeiting. This method can be applied to different materials and substrates, such as flexible PEN substrates, expanding its potential uses.
  • Enhanced Optical Performance: By precisely controlling the emission of light from polymer sidewalls through metal shadow modulation, SASE achieves photoluminescent light sources with submicron line widths. This method also allows for the fabrication of red, green, and blue submicron light sources, showcasing its potential for multi-color applications.

Innovative Design and Mechanisms

  • Utilization of Sidewall Effect: The SASE method leverages the sidewall effect inherent in the UV photolithography process. By introducing a slight tilt angle at the edge of the photosensitive polymer, the horizontal projection size of the emission window is significantly reduced, leading to the formation of light sources with submicron linewidths.
  • One-Step Metal Deposition: The SASE process involves a one-step thermal evaporation of a metal film (e.g., Ag), which simultaneously forms a semitransparent metal film on the polymer sidewall and a non-transparent metal film on the upper surface. This design ensures that light emission occurs only from the emission window, enhancing the resolution and efficiency of the light sources.
  • Optimization of Process Parameters: The study investigates the effects of various process parameters, including exposure dose, development time, and metal film thickness, on the linewidth of the submicron light sources. It is found that an optimal combination of these parameters can achieve the narrowest linewidth and the best performance.

Future Outlook

  • Scalability and Practical Applications: The simplicity and scalability of the SASE method highlight its potential for large-scale production and practical applications in various fields, such as high-resolution displays, microspectroscopy, and advanced optical devices.
  • Further Research: Future work may focus on optimizing the process parameters and exploring other materials to further enhance the performance and functionality of the submicron light sources. Additionally, integrating SASE with emerging technologies, such as flexible electronics and nanophotonics, could open up new opportunities for innovative applications.
  • Mechanistic Insights: This study provides valuable insights into the role of the sidewall effect and metal film deposition in achieving submicron light sources. It offers a promising path for the development of next-generation micro light sources with ultra-high resolution and tunability.

Stay tuned for more exciting advancements from Professor Chaoxing Wu and his team as they continue to explore the potential of SASE and push the boundaries of micro light source technology!

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