Mario Lanza

Associate Professor, King Abdullah University of Science and Technology
  • China

About Mario Lanza

Mario Lanza got a PhD in Electronic Engineering (with honors) in 2010 at Universitat Autonoma de Barcelona. In 2010-2011 he was NSFC postdoc at Peking University, and in 2012-2013 he was Marie Curie postdoc at Stanford University. In October 2013 he joined Soochow University as Associate Professor, and in March 2017 he was promoted to Full Professor. Since October 2020 he is an Associate Professor of Materials Science and Engineering at the King Abdullah University of Science and Technology (KAUST), in Saudi Arabia. Prof. Lanza has published over 170 research papers, including Nature, Science, Nature Electronics, and IEDM (among many others), and has registered four patents (one of them granted with 1 million USD). He is a Distinguished Lecturer of the Electron Devices Society (IEEE-EDS), where he also serves as Chair of its Nanotechnology Committee and member of its Board of Governors. He is the editor-in-chief of the journal Microelectronic Engineering (Elsevier), and serves in the board of many other journals and conferences, including IEEE-IEDM and IEEE-IRPS. Prof. Lanza leads a research group formed by 10-15 PhD students and postdocs, and they investigate how to improve electronic devices and circuits using 2D materials, with special emphasis in memristive devices and circuits.

Intro Content

Nature Electronics

Wafer-scale integration of 2D materials in high-density memristive crossbar arrays for artificial neural networks

Memristors made of multilayer hexagonal boron nitride exhibit multiple properties (such as ultra-low power consumption and multiple stable states) that make them ideal for the construction of crossbar arrays for artificial neural networks.


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Behind the Paper

Recent Comments

Jan 04, 2022

Very nice paper and prototype, congratulations for the excellent work ! As a constructive observation, the endurance plot could be improved by presenting one data point per cycle instead of one data point per decade (see also M. Lanza et al. ACS Nano 2021, 15, 11, 17214–17231, also available here:

Feb 24, 2021

Congratulations, outstanding work in the field of 2D materials !

Dec 08, 2020

Wonderful work, congratulations !

Sep 22, 2020

That is a very attractive work because it goes towards wafer scale integration and shows variability information. Congratulations to the authors !

Aug 25, 2020

Excellent work, congratulations to the entire team !

Aug 25, 2020

This is a fantastic work because it really addresses the problem of 2D solid-state microelectronic devices and circuits, which is integration and device-to-device variability. Congratulations to all the authors.

Nov 12, 2019

Congratulations Chetan ! Very beautiful stuff, I feel very happy for you. Well deserved !


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